Spin-orbit coupling and electronic correlation effects in epitaxial graphene studied by surface transport (E2)
Project description
Proximity coupling is a promising concept to tune graphene's transport properties. By studying the impact of hybridization, symmetry, doping and quasiparticle interactions, controlled coupling to Rashba interface states, Mott-phases and metallic quantum films will be realized and analyzed by means of nanoscale- and magnetotransport. Charge carrier mobilities will be analyzed with respect to their concentration, spin-orbit coupling and ground state by temperature and B-field dependent measurements under control of intrinsic and interfacial defects. Besides the analysis of samples from project partners, our proposed work will focus on adsorption and intercalation of Pb, Sn, Bi, BiSb as well as organic molecules on various epitaxial graphene on insulation SiC substrates. By means of defined doping lattices, Klein tunneling quantum transport phenomena will be studied.
Composition of the project group
- Christoph Tegenkamp, Project leader
- Zamin Mamiyev
- Julian Koch
- Markus Gruschwitz
- Chitran Ghosal
- Sergii Sologub
- Tim Güldenpfennig
- Dorothee Henning
- Kurt Hered
Project-related publications
Morphology of Bi(110) quantum islands on epitaxial graphene
J. Koch, C. Ghosal, S. Sologub, C. Tegenkamp, J. Phys. Condens. Matter 36, 065701 (2024)
Exploring graphene-substrate interactions: Plasmonic excitation in Sn-intercalated epitaxial graphene
Z. Mamiyev, C. Tegenkamp, 2D Mater. 11, 2 (2024)
Magnetotransport behavior of inhomogeneously doped epitaxial graphene by Bi(110) islands
J. Koch, S. Sologub, C. Ghosal, T. Tschirner, A. Chatterjee, K. Pierz, H.W. Schumacher, C. Tegenkamp, Phys Rev 109, 235107 (2024)
Transport characteristics of epitaxial graphene proximitized to a 2D Pb interface layer
M. Gruschwitz, T. Güldenpfennig, A. Cordier, C. Ghosal, S. Sologub, C. Tegenkamp, Phys. Rev. 109, 245430 (2024)
Electronic correlations in epitaxial graphene: Mott states proximitized to a relativistic electron gas
C. Ghosal, S. Ryee, Z. Mamiyev, N. Witt, T.O. Wehling, C. Tegenkamp, arXiv , (2024)
Domain Boundary Formation Within an Intercalated Pb Monolayer Featuring Charge-Neutral Epitaxial Graphene
P. Schädlich, C. Ghosal, M. Stettner, B. Matta, S. Wolff, F. Schölzel, P. Richter, M. Hutter, A. Haags, S. Wenzel, Z. Mamiyev, J. Koch, S. Soubatch, P. Rosenzweig, C. Polley, F. S. Tautz, C. Kumpf, K. Küster, U. Starke, T. Seyller, F. C. Bocquet, C. Tegenkamp, Adv. Mat. Interfaces 10, 27 (2023)
Quantum Confinement in Epitaxial Armchair Graphene Nanoribbons on SiC Sidewalls
T.T. Nhung Nguyen, S. R. Power, H. Karakachian, U. Starke, C. Tegenkamp, ACS Nano 17, 20345-20352 (2023)
Proximity-induced gap opening by twisted plumbene in epitaxial graphene
C. Ghosal, M. Gruschwitz, J. Koch, S. Gemming, C. Tegenkamp, Phys. Rev. Lett. 129, 116802 (2022)
Sn intercalation into the BL/SiC(0001) interface: A detailed SPA-LEED investigation
Z. Mamiyev, C. Tegenkamp, Surfaces and Interfaces 34, 102304 (2022)
Surface Transport Properties of Pb-intercalated Graphene
M. Gruschwitz, C. Ghosal, T.-H. Shen, S. Wolff, T. Seyller, C. Tegenkamp, Materials 14, 7706 (2021)
Impact of screening and relaxation on weakly coupled two-dimensional heterostructures
T. T. Nhung Nguyen, T. Sollfrank, C. Tegenkamp, E. Rauls, U. Gerstmann, Phys. Rev. B 103, L201408 (2021)
Strong localization in weakly disordered epitaxial graphene
D. Slawig, M. Gruschwitz, C. Tegenkamp , Surface Science 707, (2021)
Adsorption and Reaction of PbPc on Hydrogenated Epitaxial Graphene
D. Slawig, M. Gruschwitz, U. Gerstmann, E. Rauls, C. Tegenkamp, The Journal of Physical Chemistry C 125, 36 (2021)
Silicon carbide stacking-order-induced doping variation in epitaxial graphene
A. Sinterhauf, G. A. D. Momeni Pakdehi, P. Schadlich, T. T. N. Nguyen, A. A. Zakharov, S. Wundrack, E. Najafidehaghani, F. Speck, K. Pierz, T. Seyller, C. Tegenkamp, H. W. Schumacher, Adv. Funct. Mater. 30, 2004695 (2020)
High mobility epitaxial graphene on Ge/Si(100) substrates
J. Aprojanz, P. Rosenzweig, T.T. Nhung Nguyen, H. Karakachian, K. Küster, U. Starke, M. Lukosius, G. Lippert, A. Sinterhauf, M. Wenderoth, A. A. Zakharov, C. Tegenkamp, ACS Appl. Mater. Interfaces 12, 43065 (2020)
Substrate induced nanoscale resistance variation in epitaxial graphene
A. Sinterhauf, G. A. Traeger, D. M. Pakdehi, P. Schadlich, P. Wilke, F. Speck, T. Seyller, C. Tegenkamp, K. Pierz, H. W. Schumacher, M. Wenderoth, Nat. Commun. 11, 555 (2020)
Thickness dependent coherent and incoherent scattering in electronic transport through epitaxial nontrivial Bi quantum films
D. Abdelbarey, J. Koch, Z. Mamiyev, C. Tegenkamp, H. Pfnür, Phys. Rev. B 102, 115409 (2020)
Introducing strong correlation effects into graphene by gadolinium intercalation
S. Link, S. Forti, A. Stohr, K. Küster, M. Rosner, D. Hirschmeier, C. Chen, J. Avila, M. C. Asensio, A. A. Zakharov, T. O. Wehling, A. I. Lichtenstein, M. I. Katsnelson, U. Starke, Phys. Rev. B 100, 121407(R) (2019)
Probing the structural transition from buffer layer to quasifreestanding monolayer graphene by Raman spectroscopy
S. Wundrack, D. Momeni Pakdehi, P. Schadlich, F. Speck, K. Pierz, T. Seyller, H. W. Schumacher, A. Bakin, R. Stosch, Phys. Rev. B 99, 45443 (2019)
Charge-transfer transition in Au-induced quantum wires on Si(553)
F. Edler, I. Miccoli, H. Pfnür, C. Tegenkamp, Phys. Rev. B 100, 045419 (2019)
Epitaxial graphene on 6H-SiC(0001): Defects in SiC investigated by STEM
M. Gruschwitz, H. Schletter, S. Schulze, I. Alexandrou, C. Tegenkamp, Phys. Rev. Mater. 3, 094004 (2019)
Minimum Resistance Anisotropy of Epitaxial Graphene on SiC
D. Momeni Pakdehi, J. Aprojanz, A. Sinterhauf, K. Pierz, M. Kruskopf, P. Willke, J. Baringhaus, J. P. Stockmann, G. A. Traeger, F. Hohls, C. Tegenkamp, M. Wenderoth, F. J. Ahlers, H. W. Schumacher, ACS Appl. Mater. Interfaces 10, 6039 (2018)
Graphene Ribbon Growth on Structured Silicon Carbide
A. Stohr, J. Baringhaus, J. Aprojanz, S. Link, C. Tegenkamp, Y. Niu, A. A. Zakharov, C. Chen, J. Avila, M. C. Asensio, U. Starke, Ann. Phys. (Berl.) 529, 1700052 (2017)
Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC
M. Kruskopf, D. Momeni Pakdehi, K. Pierz, S. Wundrack, R. Stosch, T. Dziomba, M. Gotz, J. Baringhaus, J. Aprojanz, C. Tegenkamp, J. Lidzba, T. Seyller, F. Hohls, F. J. Ahlers, H. W. Schumacher, 2D Mater. 3, 41002 (2016)
Surface state conductivity in epitaxially grown Bi1-xSbx (111) films
J. Koch, P. Kröger, H. Pfnür, C. Tegenkamp, New J. Phys. 18, 093012 (2016)
Ballistic bipolar junctions in chemically gated graphene ribbons
J. Baringhaus, A. Stohr, S. Forti, U. Starke, C. Tegenkamp, Sci. Rep. 5, 9955 (2015)
Observation of correlated spin-orbit or in a strongly anisotropic quantum wire system
C. Brand, H. Pfnür, G. Landolt, S. Muff, J. H. Dil, T. Das, C. Tegenkamp, Nat. Commun. 6, 8118 (2015)
Exceptional ballistic transport in epitaxial graphene nanoribbons
J. Baringhaus, M. Ruan, F. Edler, A. Tejeda, M. Sicot, A. Taleb-Ibrahimi, A.-P. Li, Z. Jiang, E. H. Conrad, C. Berger, C. Tegenkamp, W. A. de Heer, Nature 506, 349 (2014)
Snapshots of non-equilibrium Dirac carrier distributions in graphene
I. Gierz, J. C. Petersen, M. Mitrano, C. Cacho, I. C. E. Turcu, E. Springate, A. Stohr, A. Köhler, U. Starke, A. Cavalleri, Nat. Mater. 12, 1119 (2013)
Plasmon electron-hole resonance in epitaxial graphene
C. Tegenkamp, H. Pfnür, T. Langer, J. Baringhaus, H. W. Schumacher, J. Phys. Condens. Matter 23, 012001 (2011)
Christoph Tegenkamp
TU Chemnitz
+49 371 531-33103
christoph.tegenkamp@physik.tu-chemnitz.de
https://www.tu-chemnitz.de/physik/AFKO/
